1n1...a, 1n36..a series www.vishay.com vishay semiconductors revision: 08-apr-13 1 document number: 93493 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 medium power silicon rectifier diodes, 12 a features ? voltage ratings from 50 v to 1000 v ? high surge capability ? low thermal impedance ? high temperature rating ? can be supplied as jan and jan-tx devices in accordance with mil-s-19500/260 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ? ? ? ? ? note ? jedec registered values are in bold electrical specifications notes ? jedec registered values are in bold ? basic part number indicates cathod e to case; for anode to case, add r to pa rt number, e.g., 1n1199 r a product summary i f(av) 12 a package do-203aa (do-4) circuit configuration single diode do-203aa (do-4) major ratings and characteristics parameter test conditions values units i f(av) 12 a t c 150 c i fsm 50 hz 230 a 60 hz 240 i 2 t 50 hz 260 a 2 s 60 hz 240 t c - 65 to 200 c v rrm range 50 to 1000 v voltage ratings type number v rrm , maximum repetitive peak reverse voltage (t c = - 65 c to 200 c) v v r(rms) , maximum rms reverse voltage (t c = - 65 c to 200 c) v v rsm , maximum non-repetitive peak reverse voltage (t c = - 65 c to 200 c) v v rm , maximum direct reverse voltage (t c = - 65 c to 200 c) v 1n1199a 50 35 100 50 1n1200a 100 70 200 100 1n1201a 150 105 300 150 1n1202a 200 140 350 200 1n1203a 300 210 450 300 1n1204a 400 280 600 400 1n1205a 500 350 700 500 1n1206a 600 420 800 600 1n3670a 700 490 900 700 1n3671a 800 560 1000 800 1n3672a 900 630 1100 900 1n3673a 1000 700 1200 1000
1n1...a, 1n36..a series www.vishay.com vishay semiconductors revision: 08-apr-13 2 document number: 93493 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? jedec registered values are in bold (1) i 2 t for time t x = i 2 ? t x ? t x (2) maximum peak reverse current (i rm ) under same conditions ? 2 x rated i r(av) forward conduction parameter symbol test conditions values units maximum average forward current ? at case temperature i f(av) 180 sinusoidal conduction 12 a 150 c maximum peak one cycle non-repetitive surge current i fsm half cycle 50 hz sine wave ? or 6 ms rectangular pulse following any rated load condition and with rated v rrm applied 230 a half cycle 60 hz sine wave ? or 5 ms rectangular pulse 240 half cycle 50 hz sine wave ? or 6 ms rectangular pulse following any rated load condition and with v rrm applied following surge = 0 v 275 half cycle 60 hz sine wave ? or 5 ms rectangular pulse 285 maximum i 2 t for fusing i 2 t t = 10 ms with rated v rrm applied following surge, ? initial t j = 200 c 260 a 2 s t = 8.3 ms 240 maximum i 2 t for individual ? device fusing t = 10 ms with v rrm = 0 v following surge, initial t j = 200 c 370 t = 8.3 ms 340 maximum i 2 ? t for individual ? device fusing i 2 ? t (1) t = 0.1 ms to 10 ms, v rrm = 0 v following surge 3715 a 2 ? s maximum forward voltage drop v fm i f(av) = 12 a (38 a peak), t c = 25 c 1.35 v maximum average ? reverse current v rrm = 50 v i r(av) (2) maximum rated i f(av) and t c 3.0 ma v rrm = 100 v 2.5 v rrm = 150 v 2.25 v rrm = 200 v 2.0 v rrm = 300 v 1.75 v rrm = 400 v 1.5 v rrm = 500 v 1.25 v rrm = 600 v 1.0 v rrm = 700 v 0.9 v rrm = 800 v 0.8 v rrm = 900 v 0.7 v rrm = 1000 v 0.6
1n1...a, 1n36..a series www.vishay.com vishay semiconductors revision: 08-apr-13 3 document number: 93493 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? jedec registered values are in bold thermal and mechanical specifications parameter symbol test conditions values units maximum operating case and storage temperature range t c , t stg - 65 to 200 c maximum internal thermal resistance, junction to case r thjc dc operation 2.0 c/w thermal resistance, ? case to sink r thcs mounting surface, smooth, flat and greased 0.5 mounting torque minimum torque applied to nut; non-lubricated threads 1.36 (12) n m (lbf in) maximum 1.69 (15) minimum torque applied to nut; lubricated threads 1.07 (9.45) maximum 1.30 (11.55) minimum torque applied to device case; lubricated threads 1.17 (10.35) maximum 1.43 (12.65) approximate weight 7.0 g 0.25 oz. case style jedec do-203aa (do-4)
1n1...a, 1n36..a series www.vishay.com vishay semiconductors revision: 08-apr-13 4 document number: 93493 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - average forward current vs. maximum allowable case temperature fig. 2 - maximum low le vel forward power loss vs. average forward current fig. 3 - maximum high level forward power loss vs. average forward current fig. 4 - maximum forward voltage vs. forward current fig. 5 - maximum transient thermal impedance, junction to case vs. pulse duration fig. 6 - maximum non-repeti tive 50 hz surge current vs. number of current pulses links to related documents dimensions www.vishay.com/doc?95311
document number: 95311 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-jun-08 1 do-203aa (do-4) outline dimensions vishay semiconductors dimensions in millimeters (inches) 3.30 (0.13) 4.00 (0.16) 5.50 (0.22) min. 10.20 (0.40) max. 11.50 (0.45) 10.70 (0.42) 10/32" unf-2a for metric devices: m5 x 0.8 0.8 0.1 (0.03 0.004) r 0.40 r (0.02) ? 6.8 (0.27) ? 1.80 0.20 (? 0.07 0.01) 3.50 (0.14) 20.30 (0.80) max. 11 (0.43) 2 + 0.3 0 (0.08 ) + 0.01 0
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